A metal interconnection of a semiconductor device and a method for forming the same include a diffusion barrier having favorable EM (electro migration) and SM (stress induced migration) properties, thereby preventing voids or other defects in copper interconnections. The diffusion barrier is made of two layers to better match coefficients of thermal expansion at the boundaries between layers, while also providing better adhesion between layers.

 
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> Multi-layered metal line of semiconductor device having excellent diffusion barrier and method for forming the same

> Manufacturing method of a liquid crystal display device using a photo resist having regions with different thicknesses, ashing, and reflow processing

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