A composition for the production of semiconductors, comprising H2SiF6 and/or HBF4 in a total amount of 10-500 mg/kg, 1-17 % by weight of H2S04, 1-15% by weight of H202, optionally in combination with additives, in aqueous solution and a process of removing residual polymers using the composition.

 
Web www.patentalert.com

< Method of correlating silicon stress to device instance parameters for circuit simulation

> Electronic device and method of making the same

> Semiconductor device and method for manufacturing the same
~ 00517