A method for manufacturing a silicon nanodot thin film having uniform doping concentration without damage by placing a substrate on a stage within a chamber. The method further including depositing a matrix thin film based on the silicon by PECVD, while doping a light emitting material such as Erbium on the matrix thin film deposited by sputtering process at the same time. The silicon nanodot film obtained by the present invention has an improved light emitting characteristic in long distance communication frequency range of 1.54 .mu.m as well as visible light range.

 
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