Conductive sidewall spacer structures are formed using a method that patterns structures (mandrels) and activates the sidewalls of the structures. Metal ions are attached to the sidewalls of the structures and these metal ions are reduced to form seed material. The structures are then trimmed and the seed material is plated to form wiring on the sidewalls of the structures.

 
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< Chip spanning connection

> Semiconductor device having a chip stack on a rewiring plate

> Substrate for packaging semiconductor chip and method for manufacturing the same

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