An in-situ ashing method for stripping a photoresist layer following a fluorocarbon based etch that transfers a pattern through a dielectric layer is disclosed. The method is especially effective in removing fluoropolymer residues from substrates with minimal damage to the dielectric layer and an underlying etch stop layer. A first oxygen ashing step is performed with low bias power to remove the residues and a portion of the photoresist. Other oxidizing gases such as CO may be added. Then a second oxygen ashing step with a bias power strips the remaining photoresist. The method also avoids faceting and damage to the dielectric layer adjacent to the opening. Furthermore, a shift in the dielectric constant of the dielectric layer is reduced compared to a single ashing step with a bias power. The in-situ process may further include an additional plasma etch step to remove an etch stop above a conductive layer.