A trench isolation having a sidewall and bottom implanted region located
within a substrate of a first conductivity type is disclosed. The
sidewall and bottom implanted region is formed by an angled implant, a 90
degree implant, or a combination of an angled implant and a 90 degree
implant, of dopants of the first conductivity type. The sidewall and
bottom implanted region located adjacent the trench isolation reduces
surface leakage and dark current.