A DC magnetron sputter reactor for sputtering deposition materials such as
tantalum and tantalum nitride, for example, and its method of use, in
which self-ionized plasma (SIP) sputtering and capacitively coupled
plasma (CCP) sputtering are promoted, either together or alternately, in
the same chamber. Also, bottom coverage may be thinned or eliminated by
inductively-coupled plasma (ICP) resputtering. SIP is promoted by a small
magnetron having poles of unequal magnetic strength and a high power
applied to the target during sputtering. CCP is provided by a pedestal
electrode which capacitively couples RF energy into a plasma. The CCP
plasma is preferably enhanced by a magnetic field generated by
electromagnetic coils surrounding the pedestal which act to confine the
CCP plasma and increase its density.