A monolithic red/infrared semiconductor laser device is joined to a blue-violet semiconductor laser device. The distance between a blue-violet emission point in the blue-violet semiconductor laser device and an infrared emission point in an infrared semiconductor laser device is significantly shorter than the distance between a red emission point in a red semiconductor laser device and the infrared emission point. A blue-violet laser beam, a red laser beam, and an infrared laser beam respectively emitted from the blue-violet emission point, the red emission point, and the infrared emission point are introduced into a photodetector after being incident on an optical disk by an optical system comprising a polarizing beam splitter, a collimator lens, a beam expander, a .lamda./4 plate, an objective lens, a cylindrical lens, and an optical axis correction element.

 
Web www.patentalert.com

< Automatic power control filter circuit and optical disc device

> Surface-emitting type semiconductor laser and method for manufacturing the same

~ 00495