The object of the present invention is providing an alignment error measuring mark for an accurate alignment in a metal photolithography process.A substrate reference mark 110 is produced by forming a concavity by an erosion caused from a chemical mechanical polishing a tungsten on a surface of a interlayer film 132 after holes for substrate reference mark 111 is formed on the interlayer film 132 at a predetermined density and the tungsten is deposited in the holes for substrate reference mark 111 and on the interlayer film 132. A resist reference mark is formed on a resist film 134 on the substrate reference mark 110 and in a shape of a rectangular shape having a different size from the one of the substrate reference mark 110. Since the substrate reference mark 110 is formed by the concavity from the erosion, a position of an edge 133a of the concavity of a alminum film 133 can be aligned to a position of an edge 110a of the concavity of the substrate reference mark 110. Consequently, an alignment error can be accurately detected by measuring the position of the edge 133a and a position of a resist reference mark 120.