Provided are a semiconductor device including an active area which is defined as high and low mobility areas and a thin film transistor having the semiconductor device. The mobility of the active area can be lowered to a level enough to satisfy the requirement of the semiconductor device. The lowering of the mobility of the active area can contribute to reducing mobility deviation between semiconductor devices. As a result, the quality of a flat panel display adopting a large-scale semiconductor device can be greatly improved.

 
Web www.patentalert.com

< Semiconductor-insulator-silicide capacitor

> Method of fabricating a thin film transistor using dual or multiple gates

~ 00494