Methods of forming a self-aligned, selective semiconductor on insulator
(SOI) structure and a related structure are disclosed. In one embodiment,
a method includes providing a substrate; forming a gate structure over a
channel within the substrate; recessing a portion of the substrate
adjacent the channel; forming an insulating layer on a bottom of the
recessed portion; and forming a semiconductor material above the
insulating layer. An upper surface of the semiconductor material may be
sloped. A MOSFET structure may include a substrate; a channel; a source
region and a drain region adjacent the channel; a gate structure above
the channel and the substrate; a shallow trench isolation (STI) distal
from the gate structure; a selectively laid insulating layer in at least
one of the source region and the drain region; and an epitaxially grown
semiconductor material above the selectively laid insulating layer.