A method of programming a non-volatile memory device including a transition metal oxide layer includes applying a first electric pulse to the transition metal oxide layer for a first period to establish a resistance of the transition metal oxide layer and applying a second electric pulse to the transition metal oxide layer for a second period, longer than the first period, to increase the resistance of the transition metal oxide layer. Related devices are also disclosed.

 
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< Magnetic recording and reproducing device and magnetic recording medium

> Magnetic tunnel junction device and writing/reading for said device

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