A strained semiconductor layer is achieved by a method for transferring stress from a dielectric layer to a semiconductor layer. The method comprises providing a substrate having a semiconductor layer. A dielectric layer having a stress is formed over the semiconductor layer. A radiation anneal is applied over the dielectric layer of a duration not exceeding 10 milliseconds to cause the stress of the dielectric layer to create a stress in the semiconductor layer. The dielectric layer may then be removed. At least a portion of the stress in the semiconductor layer remains in the semiconductor layer after the dielectric layer is removed. The radiation anneal can be either by using either a laser beam or a flash tool. The radiation anneal can also be used to activate source/drain regions.