To provide a surface-emitting type semiconductor laser that is capable of emitting a laser beam with a narrower radiation angle. A surface-emitting type semiconductor laser in accordance with the present invention includes: a substrate 110; a first mirror 142 provided above the substrate 110; an active layer 144 provided above the first mirror 142; a second mirror 146 provided above the active layer 144; an electrode 122 provided above the second mirror 146; and an emission surface 126 among the second mirror 146, which is not covered by the electrode 122, wherein the electrode 122 has a film thickness D that satisfies a formula (1) as follows, (4i+1).lamda./8n.ltoreq.D.ltoreq.(4i+3).lamda./8n . . . (1) where, in the formula (1), i is an integer, .lamda. is an oscillation wavelength, and n is a refractive index of a material that covers the emission surface.