Embodiments of the invention generally provide a method for depositing
silicon-containing films. In one embodiment, a method for depositing
silicon-containing material film on a substrate includes flowing a
nitrogen and carbon containing chemical into a deposition chamber,
flowing a silicon-containing source chemical having silicon-nitrogen
bonds into the processing chamber, and heating the substrate disposed in
the chamber to a temperature less than about 550 degrees Celsius. In
another embodiment, the silicon containing chemical is trisilylamine and
the nitrogen and carbon containing chemical is (CH.sub.3).sub.3--N.