A complementary metal oxide semiconductor (CMOS) structure includes a
semiconductor substrate having first mesa having a first ratio of channel
effective horizontal surface area to channel effective vertical surface
area. The CMOS structure also includes a second mesa having a second
ratio of the same surface areas that is greater than the first ratio. A
first device having a first polarity uses the first mesa as a channel and
benefits from the enhanced vertical crystallographic orientation. A
second device having a second polarity different from the first polarity
uses the second mesa as a channel and benefits from the enhanced
horizontal crystallographic orientation.