The present invention provides a SiC material, formed according to certain
process regimes, useful as a barrier layer, etch stop, and/or an ARC, in
multiple levels, including the pre-metal dielectric (PMD) level, in IC
applications and provides a dielectric layer deposited in situ with the
SiC material for the barrier layers, and etch stops, and ARCs. The
dielectric layer can be deposited with different precursors as the SiC
material, but preferably with the same or similar precursors as the SiC
material. The present invention is particularly useful for ICs using high
diffusion copper as a conductive material. The invention may also utilize
a plasma containing a reducing agent, such as ammonia, to reduce any
oxides that may occur, particularly on metal surfaces such as copper
filled features. The invention also provides processing regimes that
include using an organosilane as a silicon and carbon source, perhaps
independently of any other carbon source or hydrogen source, and
preferably in the absence of a substantial amount of oxygen to produce a
SiC with a dielectric constant of less than 7.0. This particular SiC
material is useful in complex structures, such as a damascene structure
and is conducive to in situ deposition, especially when used in multiple
capacities for the different layers, such as the barrier layer, the etch
stop, and the ARC and can include in situ deposition of the associated
dielectric layer(s).