To provide a laser apparatus and a laser annealing method with which a
crystalline semiconductor film with a larger crystal grain size is
obtained and which are low in their running cost. A solid state laser
easy to maintenance and high in durability is used as a laser, and laser
light emitted therefrom is linearized to increase the throughput and to
reduce the production cost as a whole. Further, both the front side and
the back side of an amorphous semiconductor film is irradiated with such
laser light to obtain the crystalline semiconductor film with a larger
crystal grain size.