A semiconductor memory device includes a row decoder, a control circuit,
and a memory cell array having an open bit-line structure. The memory
cell array includes a plurality of word lines coupled to the row decoder,
a plurality of bit lines, a plurality of memory cells, a plurality of
sense amplifier blocks, and a plurality of burn-in voltage supply lines
coupled to the plurality of sense amplifier blocks in a predetermined
order, respectively. The control circuit controls the row decoder and the
memory cell array for performing a burn-in test. During the burn-in test,
the burn-in voltage supply lines are provided with at least two different
burn-in voltages. The burn-in voltage supply lines respectively coupled
to the sense amplifier blocks that are adjacent to each other are
provided with different burn-in voltages during the burn-in test.