A method of forming a field effect transistor includes the following
steps. A trench is formed in a semiconductor region, and a shield
dielectric layer lining lower sidewalls and a bottom surface of the
trench is formed. A shield electrode is formed in a lower portion of the
trench, and a dielectric layer is formed along upper trench sidewalls and
over the shield electrode. A gate electrode is formed in the trench over
the shield electrode, and an interconnect layer connecting the gate
electrode and the shield electrode is formed.