Systems and methods are disclosed that facilitate extending data retention
time in a data retention device, such as a nanoscale resistive memory
cell array, via assessing a resistance level in a tracking element
associated with the memory array and refreshing the memory array upon a
determination that the resistance of the tracking element has reached or
exceeded a predetermined reference threshold resistance value. The
tracking element can be a memory cell within the array itself and can
have an initial resistance value that is substantially higher than an
initial resistance value for a programmed memory cell in the array, such
that resistance increase in the tracking cell will cause the tracking
cell to reach the threshold value and trigger refresh of the array before
data corruption/loss occurs in the core memory cells.