A gating voltage control system and method are provided for electrostatically actuating a micro-electromechanical systems (MEMS) device, e.g., a MEMS switch. The device may comprise an electrostatically responsive actuator movable through a gap for actuating the device to a respective actuating condition corresponding to one of a first actuating condition (e.g., a closed switching condition) and a second actuating condition (e.g., an open switching condition). The gating voltage control system may comprise a drive circuit electrically coupled to a gate terminal of the device to apply a gating voltage. The gating voltage control system may further comprise a controller electrically coupled to the drive circuit to control the gating voltage applied to the gating terminal in accordance with a gating voltage control sequence. The gating voltage control sequence may comprise a first interval for ramping up the gating voltage to a voltage level for producing an electrostatic force sufficient to accelerate the actuator through a portion of the gap to be traversed by the actuator to reach a respective actuating condition. The gating voltage control sequence may further comprise a second interval for ramping down the gating voltage to a level sufficient to reduce the electrostatic force acting on the movable actuator. This allows reducing the amount of force at which the actuator engages a contact for establishing the first actuating condition, or avoiding an overshoot position of the actuator while reaching the second actuating condition.