The present invention relates to low a dielectric material essential for a next generation semiconductor with high density and high performance, and more particularly to a low dielectric material that is thermally stable and has good film-forming properties and excellent mechanical properties, a dielectric film comprising the low dielectric material, and a semiconductor device manufactured using the dielectric film. The present invention also provides an organic silicate polymer having a flexible organic bridge unit in the network prepared by the resin composition of the component (a) and the component (b), wherein component (a) is an organosilane of the formula R.sup.1.sub.mR.sup.2.sub.nSiX.sub.4-m-n (where each of R.sup.1 and R.sup.2 which may be the same or different, is a non-hydrolysable group; X is a hydrolysable group; and m and n are integers of from 0 to 3 satisfying 0.ltoreq.m+n.ltoreq.3) and/or a partially hydrolyzed condensate thereof and wherein component (b) is an organic bridged silane of the formula R.sup.3.sub.pY.sub.3-pSi-M-SiR.sup.4.sub.qZ.sub.3-q (where each of R.sup.3 and R.sup.4 which may be the same or different, is a non-hydrolysable group; each of Y and Z which may be the same or different, is a hydrolysable group; and p and q are integers of from 0 to 2) and/or a cyclic oligomer with organic bridge unit (Si-M-Si).