A Pt film (24), a PLZT film (25), and a top electrode film (26) are formed
above a semiconductor substrate (11). Next, the top electrode film (26)
is patterned. Then, a PLZT film (27) covering an exposed portion of the
PLZT film (25) is formed as an evaporation preventing film. Then, heat
treatment is performed in an oxidative atmosphere to recover damage
sustained to the PLZT film (25). Heat treatment is not performed between
patterning of the top electrode film (26) and formation of the PLZT film
(27). Thereafter, a ferroelectric capacitor is formed by patterning the
PLZT film (25) and the Pt film (24).