A semiconductor memory device including a memory cell array and a sense
amplifier, wherein the memory cell array includes: a plurality of
information cells, in each of which either one of multi-level data is
written; a first reference cell with the same structure and the same
connection state as the information cell, in which a reference data level
is written for generating a first reference current; and a second
reference cell, which serves for generating a second reference current
used for setting the lowest data level of the multi-level data and for
setting the reference data level of the first reference cell.