An apparatus and methods for a non-volatile magnetic random access memory
(MRAM) device that includes a word line, a bit line, and a magnetic thin
film memory element located at an intersection of the word and bit lines.
The magnetic thin film memory element includes an alloy of a rare earth
element and a transition metal element. The word line is operable to heat
the magnetic thin film memory element when a heating current is applied.
Heating of the magnetic thin film memory element to a predetermined
temperature reduces its coercivity, which allows switching of the
magnetic state upon application of a magnetic field. The magnetic state
of the thin film element can be determined in accordance with principles
of the Hall effect.