Systems and methods for transferring a thin film from a substrate onto
another substrate, a layer of the same area as the substrate, of a
thickness from sub-micron to tens of micron, and of the thickness and
flatness required by VLSI and MEMS applications, and with sufficiently
low defect density in the transferred layer are disclosed. The method
enables separating a solid layer from a supply substrate and optionally
transferring the solid layer onto a target substrate. The method
generally includes providing the solid layer on a hydrogen recombination
region containing hydrogen-recombination-dopant at a concentration higher
than that of the solid layer. The supply substrate includes the solid
layer, a mother substrate, and the hydrogen recombination region. The
hydrogen recombination region may form a part of the mother substrate or
may be separate therefrom. Hydrogen atoms are promoted into the supply
substrate to convert the hydrogen recombination region to a
hydrogen-embitterment region which is then volatilized to form a void
region, thereby separating the solid layer from the remainder of the
supply substrate. The supply substrate may be bonded to the target
substrate prior to the volatilizing so as to transfer the solid layer to
the target substrate. The solid layer may be formed by epitaxial growth
or by ion implantation.