Barrier layers for conductive features and methods of formation thereof
are disclosed. A first barrier material is deposited on top surfaces of
an insulating material, and a second barrier material is deposited on
sidewalls of the insulating material, wherein the second barrier material
is different than the first barrier material. The first barrier material
induces grain growth of a subsequently deposited conductive material at a
first rate, and the second barrier material induces grain growth of the
conductive material at a second rate, wherein the second rate is slower
than the first rate.