A method for fabricating a semiconductor including defining a first component region and a second component region in a semiconductor body is provided. A first epitaxial layer is formed through the first component region. A second epitaxial layer is formed over the first epitaxial layer, including configuring the physical dimensions of a first active zone of the first component region independent of a second active zone of the second component region via the first epitaxial layer and the second epitaxial layer. In one embodiment, the first component is a radio-frequency transistor and the second component is a varactor.