A GaN-based LED structure is provided so that the brightness and lighting efficiency of the GaN-based LED are enhanced effectively. The greatest difference between the GaN-based LEDs according to the invention and the prior arts lies in the addition of a thin layer on top of the traditional structure. The thin layer could be formed using silicon-nitride (SiN), or it could have a superlattice structure either made of layers of SiN and undoped indium-gallium-nitride (InGaN), or made of layers SiN and undoped aluminum-gallium-indium-nitride (AlGaInN), respectively. Because of the use of SiN in the thin layer, the surfaces of the GaN-based LEDs would be micro-roughened, and the total internal reflection resulted from the GaN-based LEDs' higher index of refraction than the atmosphere could be avoided.