The present invention provides a semiconductor integrated circuit having area efficiency and repair efficiency improved by sharing a redundant memory macro among a plurality of SRAM macros. Each of the plurality of memory macros includes a memory cell array connected to word lines and bit lines and a redundant circuit that replaces a defective bit line of the memory cell array to a normal bit line and a redundant bit line and outputs defect information to a redundant signal line. The redundant memory macro includes a redundant memory cell array connected to redundant word lines and the redundant bit line, and a first word line connection circuit that connects a word line corresponding to a memory macro to be repaired and disconnects a word line corresponding to a normal memory macro from the redundant word line.