A semiconductor device includes a bulk semiconductor substrate, a plurality of storage elements, a bit line, a first voltage being applied to the first region side of the thyristor, and a voltage lower than the first voltage being applied to a word line. The plurality of storage elements formed on the bulk semiconductor substrate and each including a thyristor formed on the bulk semiconductor substrate and including a first region of a first conductor type, a second region of a second conduction type opposite to the first conduction type, a third region of the first conduction type and a fourth region of the second conduction type jointed together in order, a gate electrode formed on the third region, and a field effect transistor formed on the semiconductor substrate on which the thyristor is formed and connected to the fourth region of the thyristor.