A series structure of a chemically amplified negative tone photoresist
that is not based on cross-linking chemistry is herein described. The
photoresist may comprise: a first aromatic structure copolymerized with a
cycloolefin, wherein the cycloolefin is functionalized with a di-ol. The
photoresist may also include a photo acid generator (PAG). When at least
a portion of the negative tone photoresist is exposed to light (EUV or UV
radiation), the PAG releases an acid, which reacts with the
functionalized di-ol to rearrange into a ketone or aldehyde. Then new
ketone or aldehyde is less soluble in developer solution, resulting in a
negative tone photoresist.