The present invention provides a trench isolation structure, a method of manufacture therefor and a method for manufacturing an integrated circuit including the same. The trench isolation structure (130), in one embodiment, includes a trench located within a substrate (110), the trench having an implanted buffer layer (133) located in the sidewalls thereof. The trench isolation structure (130) further includes a barrier layer (135) located over the implanted buffer layer (133), and fill material (138) located over the barrier layer (135) and substantially filling the trench.

 
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