A flash memory device for performing a bad block management and a method of performing bad block management are implemented in hardware level. During a booting procedure of a flash memory device, a bad block-mapping table stored in a predetermined block of memory cell array unit or other nonvolatile memory is stored in a bad block mapping register via a bad block-mapping table loader. An address selector receives a logical address from an external device and compares the logical address with a bad block address stored in the bad block mapping register. A bad block-state controller determines a count number of a re-mapping mark and outputs a re-mapping mark flag to the address selector. The address selector selects a logical address or a bad block address received from the bad block mapping register as a physical address and outputs the physical address to the memory cell array unit.