A method, system and computer program product for programming a plurality of programmable resistive memory cells is disclosed. The method comprises executing a first process to program input data, including setting up bias voltages on bit lines and word lines on the memory cells, determining if the input data for each memory cell corresponds to a set state and then setting such cells to a set state. The method further comprises executing a second process to program input data, determining if the input data for each memory cell corresponds to a reset state and then resetting such cells to a reset state.