Provided is a vertical external cavity surface emitting laser (VECSEL) including: a bottom DBR mirror formed on a substrate; an RPG layer formed on the bottom DBR layer; a capping layer formed on the RPG mirror; an optical pump irradiating a pump beam onto a surface of the capping layer; and an external cavity mirror installed on an external surface of a stacked layer corresponding to the bottom DBR mirror. The RPG layer includes: a plurality of first barrier layers periodically formed on nodes of a standing wave and formed of a material having a larger energy band gap width than that of the pump beam; and a plurality of gain layers including a plurality of QW layers formed of InGaAs and disposed between the first barrier layers, and a plurality of second barrier layers disposed on upper and lower portions of the QW layers.

 
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< Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho.sup.3+, SM.sup.3+, EU.sup.3+, DY.sup.3+, ER.sup.3+ and TB.sup.3+ is excited with GaN-based compound laser diode

> Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device

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