A select gate of a NAND memory array has a first dielectric layer formed on a semiconductor substrate. A first conductive layer is formed on the first dielectric layer. Conductive spacers are formed on sidewalls of the first conductive layer and are located between an upper surface of the first conductive layer and the first dielectric layer. A second dielectric layer overlies the first conductive layer and the conductive spacers. A second conductive layer is formed on the second dielectric layer. A third conducive layer is formed on the second conductive layer, passes though a portion of the second conductive layer and the second dielectric layer, and contacts the first conductive layer. The third conductive layer electrically connects the first and second conductive layers.