A process for patterning a nanocarbon material includes a step of forming
a nanocarbon layer on a substrate; a step of forming a first metal layer
on the nanocarbon layer to pattern the first metal layer, the first metal
layer containing at least one selected from the group consisting of zinc,
tin, indium, aluminum, and titanium; and a step of etching the nanocarbon
layer with oxygen plasma using the first metal layer as a positive
pattern. Also, a method for manufacturing a semiconductor device
including a semiconductor layer containing a nanocarbon material includes
a step of patterning a nanocarbon material by the above process; and, a
semiconductor device containing a nanocarbon material includes a
semiconductor layer including a nanocarbon sub-layer patterned by the
process.