Systems and methods of fabricating a U-shaped memory device with a
recessed channel and a segmented/separated ONO layer are provided.
Multibit operation is facilitated by a separated ONO layer, which
includes a charge trapping region on sidewalls of polysilicon gate
structures adjacent to source/drain regions. Programming and erasing of
the memory cells is facilitated by the relatively short distance between
acting source regions and the gate. Additionally, short channel effects
are mitigated by a relatively long U-shaped channel region that travels
around the recessed polysilicon gate thereby adding a depth dimension to
the channel length.