A pad section serving as an electrode for external connection of a
semiconductor device includes a first pad metal (61) formed in the top
layer, a second pad metal (62) formed under the first pad metal (61) via
an interlayer insulating film (71), and vias (63) which penetrate the
interlayer insulating film (71) and electrically connect the first pad
metal (61) and the second pad metal (62). The first pad metal (61) and
the second pad metal (62) have edges displaced from each other so as not
to be aligned with each other along the thickness direction of each
layer. Thus, it is possible to reduce stress occurring on an edge of the
second pad metal (62), thereby reducing damage on the interlayer
insulating film (71) and so on.