The method for manufacturing a single crystal semiconductor achieves an object to reduce the impurity concentration nonuniformity within a semiconductor wafer plane and thus to improve the wafer planarity by introducing an impurity into the single crystal semiconductor more uniformly during the pulling of the single crystal semiconductor from a melt. In the course of pulling the single crystal semiconductor (6), the rotating velocity (.omega.2) of the single crystal semiconductor (6) being pulled is adjusted to a predetermined value or higher, and a magnetic field having a strength in a predetermined range is applied to the melt (5). Particularly, the crystal peripheral velocity is adjusted to 0.126 m/sec or higher, and M/V.sup.1/3 is adjusted to 35.5.ltoreq.M/V.sup.1/3.ltoreq.61.3. More desirably, the crystal peripheral velocity is adjusted to 0.141 m/sec or higher, and M/V.sup.1/3 is adjusted to 40.3.ltoreq.M/V.sup.1/3.ltoreq.56.4.