A semiconductor device having interconnects is reduced in leakage current
between the interconnects and improved in the TDDB characteristic. It
includes an insulating interlayer 108, and interconnects 160 filled in
grooves formed in the insulating interlayer, including a copper layer 124
mainly composed of copper, having the thickness smaller than the depth of
the grooves, and a low-expansion metal layer 140, which is a metal layer
having a heat expansion coefficient smaller than that of the copper
layer, formed on the copper layer.