A dielectric film containing lanthanide doped TiO.sub.x and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO.sub.2. The lanthanide doped TiO.sub.x dielectric layer is arranged as a layered structure of one or more monolayers of the lanthanide doped TiO.sub.x. The dopant may be selected from a group consisting of Nd, Tb, and Dy.