A semiconductor laser diode comprises: an n-type GaAs substrate; and a
first laser diode structure having a first n-type cladding layer, a first
active layer including a quantum well layer, a first p-type cladding
layer on the first active layer, a p-type signal layer on the first
p-type cladding layer and which has the same constituent elements as
those of the first p-type cladding layer, and a p-type ridge waveguide in
a stripe mesa-like shape on the signal layer, which has the same
constituent elements as those of the signal layer, and in which
composition ratios of two constituent elements in a complementary
relation of constituent elements are different from those composition
ratios of the signal layer.