A solid-state image pick-up unit comprises: a semiconductor substrate
comprising an area in which a photoelectric converting portion is formed;
and an electric charge transfer portion that transfers an electric charge
formed by the photoelectric converting portion, wherein the electric
charge transfer portion comprises: an electric charge transfer electrode
including a first layer electrode and a second layer electrode; and a
gate oxide film, the gate oxide film comprises a second gate oxide film
formed under the second layer electrode, the second gate oxide film
comprising an ONO film which comprises a SiO film, a SiN film and a SiO
film in this order, and the second gate oxide film is continuously formed
to cover whole of a region between the first layer electrode and the
second layer electrode and a region under the second layer electrode.