A P-type metal oxide semiconductor (PMOS) device can include an N-well
that does not extend completely throughout the active region of the PMOS
device. For example, the PMOS device can be fabricated using a masking
step to provide an N-well having an inner perimeter and an outer
perimeter. The inner perimeter of the N-well surrounds at least a portion
of the active region of the PMOS device. According to an embodiment, the
inner perimeter of the N-well surrounds the entire active region. The
PMOS device can include a deep N-well in contact with the N-well.