A method for forming a semiconductor device includes forming a photoresist layer over a substrate and patterning the photoresist layer to form photoresist portions. A second layer is formed over the substrate in areas not covered by the photoresist portions and the photoresist portions are removed. After removing the photoresist portions, the second layer is used to modify the substrate to create at least a portion of the semiconductor device.

 
Web www.patentalert.com

< Oxide-nitride stack gate dielectric

> Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof

~ 00432