TOF and color sensing detector structures have x-axis spaced-apart y-axis extending finger-shaped gate structures with adjacent source collection regions. X-dimension structures are smaller than y-dimension structure and govern performance, characterized by high x-axis electric fields and rapid charge movement, contrasted with lower y-axis electric fields and slower charge movement. Preferably a potential barrier is implanted between adjacent gates and a bias gate is formed intermediate a gate and associated source region. Resultant detector structures can be operated at the more extreme gate voltages that are desirable for high performance.

 
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> Optical information recording medium and method of manufacturing thereof, manufacturing apparatus, recording/reproducing method, and recording/reproducing apparatus

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