A semiconductor memory device having a word line driver circuit configured
in stages. A plurality of sub word line driver circuits are connected, in
parallel, to each main word line, and provide a sub word line enable
signal to a selected sub word line in response to a main word line enable
signal provided through a main word line. A plurality of (local) word
line driver circuits are connected in parallel, to each sub word line and
provide a local word line enable signal to a selected local word line in
response to the (main/sub) word line enable signal so as to operate a
plurality of memory cells connected to the selected local word line. The
transistor count and layout area of a semiconductor memory device
decreases and a reduced chip area can be achieved.